|
Your search returned 16 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
|
Year : 2003 Volume number : 50 Issue: 08 |
Investigation Of A New Ingap-Ingaas Pseudomorphic Double Doped-Channel Heterostructure Field-Effect Transistor (Pddchfet)
(Article)
Subject:
Schottky
,
Double Doped-Channel (Ddc)
Author:
Hung-Ming
Chuang
Wen-Chau
Liu
Xin-Da
Liao
page:
1717
-
1723
Nonlocal Effects In Thin 4h-Sic Uv Avalanche Photodiodes
(Article)
Subject:
Breakdown Voltage
,
Dead Space
,
Impact Ionization
Author:
B K
Ng
P R
David
Graham J
Rees
page:
1724
-
1732
Experimental And Numerical Assessment Of Gate-Lag Phenomena In Algaas-Gaas Heterostructure Field-Effect Transistors (Fets)
(Article)
Subject:
Gallium Compounds
,
Transient Response
Author:
Giovanni
Verzellesi
E
Zanoni
Andrea
Mazzanti
page:
1733
-
1740
Silicon Carbide Pinch Rectifiers Using A Dual-Metal Ti-Ni2si Schottky Barrier
(Article)
Subject:
Sic Schottky Diodes
,
Dual-Metal Pinch Rectifiers
Author:
Vito
Raineri
Francesco
Via
Fabrizio
Roccaforte
page:
1741
-
1748
Photo-Cvd Sio2 Layers On Algan And Algan-Gan Moshfet
(Article)
Subject:
Gan
,
Sio2
Author:
Y Z
Chiou
S J
Chang
Y K
Su
page:
1748
-
1752
High Activation Of Sb During Solid-Phase Epitaxy And Deactivation During Subsequent Thermal Process
(Article)
Subject:
Activation
,
Deactivation
Author:
Kunihiro
Suzuki
Hiroko
Tashiro
page:
1753
-
1757
Improvement Of Address Discharge Characteristics Using Asymmetric Variable-Width Scan Waveform In Ac Plasma Display Panel
(Article)
Subject:
Plasma Display Panel
,
Dynamic Voltage Margin
Author:
Heung-Sik
Tae
Sung-Ii
Chien
page:
1758
-
1765
Nitride-Based Green Light-Emitting Diodes With High Temperature Gan Barrier Layers
(Article)
Subject:
Reliability
,
Ingan-Gan
Author:
W C
Lai
J M
Tsai
J K
Sheu
page:
1766
-
1770
Trends In The Ultimate Breakdown Strength Of High Dielectric-Constant Materials
(Article)
Subject:
Oxide
,
Mos Devices
,
Reliability
Author:
Joe W
Mcpherson
Jinyoung
Kim
Ajit
Shanware
page:
1771
-
1778
Scaling Effects On Gate Leakage Current
(Article)
Subject:
Device Simulation
,
Band-Gap Narrowing (Bgn)
Author:
Shin-Ichi
Takagi
Hiroshi
Watanabe
Kazuya
Matsuzawa
page:
1779
-
1784
Harmonic Gain And Noise In A Frequency-Doubling Gyro-Amplifier
(Article)
Subject:
Nonlinear Gain
,
Harmonic Gyrotron
Author:
John C
Rodgers
Thomas M
Antonsen
Victor L
Granatstein
page:
1785
-
1792
Analytical Solutions To The One-Dimensional Oxide-Silicon-Oxide System
(Article)
Subject:
Analytical Solution
,
Double-Gate (Dg)
Author:
Man
Wong
Xuejie
Shi
page:
1793
-
1800
Semisuperjunction Mosfets New Design Concept For Lower On-Resistance And Softer Reverse-Recovery Body Diode
(Article)
Subject:
Superjunction
,
High-Voltage Device
Author:
Wataru
Saito
Satoshi
Aida
Ichiro
Omura
page:
1801
-
1806
Low-Temperature Poly-Sige Alloy Growth Of High Gain/Speed Pin Infrared Photosensor With Gold-Induced Laterel Crystallization (Au-Ilc)
(Article)
Subject:
Response Speed
,
Optical Gain
Author:
C Y
Chen
Jyh-Jier
Ho
page:
1807
-
1812
Plastic Micromachining Assisted By Ultraviolet Illumination
(Article)
Subject:
Pet
,
Micro-Gear
Author:
Teymour
Maleki
Shamsoddin
Mohajerzadeh
Ali Afzali-
Kusha
page:
1813
-
1815
A Compact Model For Flicker Noise In Mos Transistors For Analog Circuit Design
(Article)
Subject:
Mosfet
,
Noise
Author:
Carlos Galup-
Montoro
Alfredo
Arnaud
page:
1815
-
1818
|
|
| | |